Plasma physics : ion energy in RF plasma etching

PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching

A numerical study of parallel-plate rf discharges in Ar has been performed including the transport of ions and electrons in the sheath on the substrate. We employ a two-dimensional particle-in-cell with Monte Carlo collisions (PIC/MCC) method for an asymmetric capacitive discharge with an external electrical circuit containing a blocking capacitor and an rf power supply. The model gives self-co...

Heavy Ion Physics and Quark-Gluon Plasma

These proceedings represent a brief overview of the exciting physics coming out from the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory. The experimental results from BRAHMS, PHOBOS, PHENIX and STAR indicate a strongly-coupled state of matter that can only be described on the partonic level. We review some of the latest experimental results as we presented at the meeti...

Low Temperature Plasma Etching Control through Ion Energy Angular Distribution and 3-Dimensional Profile Simulation

Alternative modeling methods for plasma-based Rf ion sources.

Rf-driven ion sources for accelerators and many industrial applications benefit from detailed numerical modeling and simulation of plasma characteristics. For instance, modeling of the Spallation Neutron Source (SNS) internal antenna H(-) source has indicated that a large plasma velocity is induced near bends in the antenna where structural failures are often observed. This could lead to improv...

Rf Plasma-based Ion Source Modeling on Unstructured Meshes

Ion source performance for accelerators and industrial applications can be improved through detailed numerical modeling and simulation. There are a number of technical complexities with developing robust models, including a natural separation of important time scales (rf, electron and ion motion), inclusion of plasma chemistry, and surface effects such as secondary electron emission and sputter...